Understanding oxide-thickness-dependent variability in dense Si-MOS quantum dot arrays

Arne Loenders, Jacques Van Damme, Clement Godfrin, Paola Favia, Jacopo Franco, Thomas Van Caekenberghe, Bart Raes, Gulzat Jaliel, Sylvain Baudot, Luis Francisco Pinotti, Alexander Grill, George Simion, Kristof Moors, Vukan Levajac, Sofie Beyne, Sugandha Sharma, Stefan Kubicek, Yosuke Shimura, Roger Loo, Massimo Mongillo, Danny Wan, Kristiaan De Greve

arXivarxiv/2605.12143May 12, 2026quant-phscore 0

Achieving uniform and scalable control of semiconductor spin qubits remains a key challenge for large scale quantum computing. In this work, we investigate how gate oxide thickness influences uniformity in dense two dimensional silicon quantum dot arrays. Using a 7 x 7 array fabricated in a 300 mm CMOS-process patterned by EUV lithography, we statistically characterize 392 quantum dots across four different oxide thicknesses. The threshold voltages, capacitances, lever arms, and charging energies are extracted using parallel row based measurements and we identify an optimal SiO2 thickness of…

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