Comparative assessment of germanium-based spin-qubit modalities: donor, acceptor, gate-defined hole, and gate-defined electron platforms

D. -M. Mei, K. -M. Dong, S. A. Panamaldeniya, A. Prem, S. Chhetri, N. Budhathoki, S. Bhattarai

arXivarxiv/2605.13680May 13, 2026quant-phscore 0

High-purity germanium (Ge) has re-emerged as a versatile semiconductor platform for spin-based quantum information processing because it combines mature materials processing, access to spin-free isotopes, high mobilities, small effective masses, and strong but engineerable spin--orbit coupling. However, ``Ge qubits'' are not a single technology. Donor spin qubits, acceptor spin qubits, gate-defined hole spin qubits, and gate-defined electron spin qubits exploit different parts of the Ge band structure and therefore make distinct trade-offs among coherence, controllability, fabrication…

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