Quantum Emitters at Telecommunication Wavelengths based on Carbon Defects in Transition Metal Dichalcogenides
Low-dimensional materials have emerged as promising hosts for quantum emitters, whose emission typically arises from either strain-induced band bending or defect-induced two-level systems. Among these materials, transition metal dichalcogenide (TMD) monolayers have attracted particular attention; however, their performance is limited by strong photoluminescence (PL) quenching at room temperature. As TMDs transition from a direct to an indirect bandgap when moving from monolayers to multilayers, we herein propose a strategy to overcome this quenching limitation by exploiting the indirect…
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