Impact of Surface Treatment on Noise in PL-Measurements of Silicon Vacancies in 4H-SiC Lateral pin-Diodes

Jannik H. Schwarberg, Fabian Magerl, Susanne Beuer, Alexander May, Christian Gobert, Martin Siebert, Christian Miersch, Heino Möller, Wolfgang Knolle, Chihang Luo, Jan F. Dick, Franziska C. Beyer, Mathias Rommel, Jörg Schulze

arXivarxiv/2605.24157May 22, 2026quant-phscore 0

Silicon vacancies ($V_\mathrm{Si}$) in 4H-SiC are promising candidates for quantum technologies due to their long spin coherence times and integrability into mature semiconductor platforms. However, conventional CMOS-compatible processing introduces significant photoluminescence noise from passivation layers and crystal damage, degrading color center coherence and excitation linewidths. This work evaluates strategies to minimize such background noise. Thermally grown oxides with nitrogen monoxide annealing provide excellent low-noise passivation, remaining stable during subsequent…

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