Electronic Band Structure of Silicon Determined via a Variational Adiabatic Eigensolver: Theory and Experiment
This work addresses the critical challenge of excited-state preparation for semiconductor band structure calculations. We introduce a variational adiabatic eigensolver (VAE) protocol that combines adiabatic evolution with variational optimization to prepare high-fidelity eigenstates on noisy intermediate-scale quantum (NISQ) devices. Applying a momentum-space truncation, we accurately compute the electronic band structure of silicon -- an idealized infinite periodic system -- using only a modest number of qubits. Our approach employs multi-qubit parameterized circuits and a phase-based loss…
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