Open Research Index

High yield creation of germanium vacancy centers in diamond by focused ion beam implantation and high temperature annealing

S. Dietel, E. Scattolo, J. Fuhrmann, L. Kazak, A. Cian, E. Missale, D. Giubertoni, F. Jelezko

arXivarxiv/2606.28528Jun 26, 2026quant-phscore 0

Negatively charged germanium vacancy centers (GeV) in diamond are a promising platform for quantum computing and quantum communication. However, these applications require the precise incorporation of GeV centers with good optical properties inside of nanophotonic structures. In this work, we demonstrate the highly efficient local creation of GeV centers in diamond via focused-ion-beam implantation, followed by high-temperature annealing. We report the successful creation of GeV centers over the depth range of 5.5 - 30 nm. Implantation at low fluence enables the creation of single GeV…

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