Epitaxial single T centres in silicon-on-insulator

Christian H. Christiansen, Kasper H. Nielsen, Alisha Nanwani, Sebastiano Guaraldo, E. Laurits Piehorsch, Arnulf J. Snedker-Nielsen, Magnus L. Madsen, David R. Gongora, Emanuele Brusaschi, Rodrigo A. Thomas, Ian Farrer, D. Hieu Nguyen, Georgios Kountouris, Beñat M. d. A. Jokisch, Mohammad Khalifa, Claudia Piccinini, Mathias Ø. Augustesen, Hugo Laurell, Kokeb B. Benti, Maria S. Gonzalez, Amedeo Carbone, Elvedin Memisevic, Sangeeth Kallatt, Mark K. Svendsen, Marianne E. Bathen, Lasse Vines, Peter Granum, Peter Krogstrup, Stefano Paesani

arXivarxiv/2607.06272Jul 7, 2026quant-phscore 0

Spin-photon interfaces based on silicon quantum emitters offer a scalable platform for quantum computing and networking. However, achieving coherent photon emission remains a primary challenge due to stringent material quality requirements. To overcome this, we utilise high-purity molecular-beam epitaxy (MBE) to epitaxially incorporate single T centres in silicon-on-insulator (SOI) wafers. We demonstrate single T-centre emission coupled to a nanophotonic waveguide and observe significant suppression of homogeneous broadening, yielding optical linewidths as narrow as 30 MHz using natural…

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