SiMOS quantum-dot spin qubits enabled by extreme-ultraviolet lithography

Thomas Van Caekenberghe, Paul Steinacker, Bart Raes, Sofie Beyne, Clement Godfrin, Jacques Van Damme, Sylvain Baudot, Arne Loenders, Gulzat Jaliel, Stefan Kubicek, Johan De Backer, Yannick Hermans, Sugandha Sharma, Shuchi Kaushik, Yuchao Jiang, Yosuke Shimura, Roger Loo, Vukan Levajac, Kristof Moors, George Simion, Florian K. Unseld, Ensar Vahapoglu, Ajit Dash, Tuomo Tanttu, Chris C. Escott, Chih Hwan Yang, Andre Saraiva, Arne Laucht, Wee Han Lim, Nard Dumoulin Stuyck, Massimo Mongillo, Danny Wan, Andrew S. Dzurak, Kristiaan De Greve

arXivarxiv/2607.13121Jul 14, 2026cond-mat.mes-hallscore 0

The realization of large-scale silicon quantum processors requires spin qubits compatible with advanced semiconductor manufacturing technologies, demanding lithographic processes that combine nanometer-scale precision with exceptional uniformity. Although the highest-performing silicon spin qubits demonstrated to date have relied on electron-beam (e-beam) lithography, its serial exposure process limits reproducibility studies and wafer-scale fabrication. Here, we demonstrate high-performance silicon metal-oxide-semiconductor (SiMOS) spin qubits fabricated using extreme-ultraviolet (EUV)…

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