One Aperture, Two Colors: Depth-Allocated Bilayer Silicon Nitride Gratings for Trapped-Ion Addressing
Scaling multicolor quantum control on chip presents a geometric conflict: each added wavelength traditionally requires another routing corridor, emitter, and electrode opening, consuming trap-surface area and exposing charge-susceptible dielectric near the quantum target. This work introduces an all-planar, vertically stacked silicon-nitride architecture that co-registers independently fed optical transitions within one 24 x 24 $μ$m footprint. For $^{40}\text{Ca}^+$, the device focuses the 729.4 nm qubit and 854.2 nm repump wavelengths onto a shared site 70 $μ$m above the upper film. A…
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