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A convergent Scharfetter-Gummel scheme for a three-species drift-diffusion model for memristors

Ansgar Jüngel, Zhiwei Sun, Sara Xhahysa

arXivarxiv/2607.24086Jul 27, 2026math.NAscore 0

A structure-preserving fully implicit Scharfetter-Gummel finite-volume scheme for a three-species drift-diffusion model for semiconductors is proposed and analyzed. The equations describe the evolution of the electron, hole, and oxygen vacancy densities in a (bounded) memristor device, coupled to the Poisson equation for the electric potential, with mixed-type boundary conditions. Recasting the Scharfetter-Gummel fluxes in an upwind form, a hidden Fisher information component is revealed. Owing to the degeneracy of the Bernoulli function appearing in the fluxes, additional edgewise…

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