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High-Field EPR/ENDOR of N/Be Centers for Defect Engineering in 6H-SiC

Yuliya Ermakova, Ekaterina Dmitrieva, Margarita Sadovnikova, Fadis Murzakhanov, George Mamin, Sergey Nagalyuk, Evgeny Mokhov, Marat Gafurov

arXivarxiv/2607.27862Jul 30, 2026cond-mat.mtrl-sciscore 0

Silicon carbide (SiC) in its various structural modifications is widely used in power semiconductor electronics, operating under extreme conditions of high temperature, high voltage, and intense radiation. The discovery of spin defects (S>0) with unique optical and coherent properties has further positioned SiC as a promising platform for quantum technologies. Here, we investigate a 6H-SiC single crystal co-doped with nitrogen and beryllium at concentrations of 1018 cm-3, using continuous-wave and pulsed electron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR). To…

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