Nanoscale graphitization and defect evolution in silicon-vacancy center-containing nanodiamonds under high-pressure high-temperature annealing

M. De Feudis, B. Yavkin, L. Henry, K. O. Ho, M. -P. Adam, P. Goldner, F. Benedic, S. Desgreniers, J. -F. Roch

arXivarxiv/2608.10632Aug 11, 2026quant-phscore 0

Group-IV color centers, such as the silicon-vacancy (SiV) defect, are highly promising for solid-state quantum technologies. However, nanodiamonds typically exhibit significant lattice strain and structural disorder, which degrade their optical properties and hinder the resolution of the fine spectral structure at cryogenic temperatures. High-pressure high-temperature (HPHT) annealing offers a potential route to relax internal strain, although the phase stability of diamond at the nanoscale under such conditions remains poorly constrained. Here, we investigate the structural evolution of…

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