Engineering of Dual Wavelength, Polarization Selective Metalenses in Silicon Carbide

Xiaoying Huang, Ziwei Yang, Konosuke Shimazaki, Kritsana Saego, Otto Cranwell Schaeper, Evan Williams, Dragomir Neshev, Hark Hoe Tan, Igor Aharonovicha, Mehran Kianinia

arXivarxiv/2608.17506Aug 18, 2026quant-phscore 0

Spin defects in silicon carbide (SiC) are promising candidates for integrated quantum photonics, offering long-lived spin states and near-infrared emission suitable for low-loss photonic integration and fibre-based quantum communication. However, light extraction from these defects remains challenging due the relatively high refractive index of SiC. Metalenses offer a compact approach to enhance light collection by engineering the wavefront directly at the material interface. Here, we design and fabricate monolithic metalenses from SiC bulk material that simultaneously operate at 860 and…

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