Opto-Electrical Detection of Donor Bound Excitons in Silicon-on-Insulator Substrate

A. Kanniainen, A. S. Kumar, A. Sammak, G. Scappucci, J. T. Muhonen

arXivarxiv/2609.15674Sep 14, 2026cond-mat.mes-hallscore 0

Spin of a donor bound electron in silicon has been shown to be a very coherent qubit system but lacks a coherent optical interface. There does, however, exist a donor bound exciton transition that can be excited optically but decays dominantly via an Auger recombination producing an electrical signal. This provides an opto-electrical pathway for spin readout. Scaling this readout to single-spin level will require interfacing the spins with silicon photonics for efficient guiding of photons, which in turn will require moving to silicon-on-insulator (SOI) substrates. Here we demonstrate first…

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