Electrothermal behavior of superconducting nanowires buried in a commercial CMOS process

Mohamed Gharib, Leonid Popryho, Salma Abdelzaher, Tejas Guruswamy, Tomas Polakovic, Umeshkumar Patel, Orlando Quaranta, Thomas Cecil, Clarence Chang, Yu-Sheng Chen, Thomas H. Swift, Grayson M. Noah, Alberto Gomez-Saiz, John J. L. Morton, M. Fernando Gonzalez-Zalba, Antonino Miceli, Inna Partin-Vaisband

arXivarxiv/2609.35624Sep 28, 2026physics.ins-detscore 0

Superconducting films native to a commercial CMOS process enable co-integration of superconducting devices (high-kinetic-inductance elements and nanowire detectors) with cryogenic CMOS on one monolithic die. Such films are buried in the front-end-of-line, beneath the back-end-of-line metal stack, an environment that might quench a self-heated hot spot. Current-voltage characteristics are reported for titanium nitride (TiN) nanowires in the polycrystalline-silicon resistor layer of a 22 nm FD-SOI process, and measured retrapping currents are compared with thermal models for longitudinal…

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