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Valley transitions during spin shuttling in Si/SiGe heterostructures

Jonas R F Lima, Guido Burkard

arXivarxiv/2610.08984Oct 6, 2026cond-mat.mes-hallscore 0

Valley excitations are considered one of the biggest challenges for a coherent spin shuttling in Si/SiGe heterostructures. In this work we theoretically investigate the valley dynamics during spin shuttling in a Si/SiGe heterostructure by considering a two-level system given by the two low-lying valley states of the mobile quantum dot. We assume that the electron is initially in the valley ground state and analyze the evolution of this state during shuttling. We find that, depending on the shuttling velocity, the system can be in three distinct regimes. In one of these regimes, the quantum…

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