Two-Qubit Module Based on Phonon-Coupled Ge Hole-Spin Qubits: Design, Fabrication, and Readout at 1-4 K

D. -M. Mei; S. A. Panamaldeniya; K. -M. Dong; S. Bhattarai; A. Prem

Two-Qubit Module Based on Phonon-Coupled Ge Hole-Spin Qubits: Design, Fabrication, and Readout at 1-4 K

D. -M. Mei, S. A. Panamaldeniya, K. -M. Dong, S. Bhattarai, A. Prem

arXivarxiv/2601.01704Jan 5, 2026cond-mat.mes-hallscore 0

We present a device-level design study for a two-qubit module based on phonon-coupled germanium (Ge) hole-spin qubits targeted for operation at $1$--$4~\mathrm{K}$. Building on prior theoretical modeling of phonon-engineered Ge qubits and phononic-crystal (PnC) cavities, we translate those modeling results into a fabrication-oriented two-qubit layout that integrates two gate-defined hole-spin qubits in a strained Ge quantum well with a GHz PnC defect mode intended to mediate a coherent phonon-based interaction. We specify the SiGe/Ge heterostructure, electrostatic gate layout, PnC cavity…

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