Interacting electrons in silicon quantum interconnects
Coherent interconnects between gate-defined silicon quantum processing units are essential for scalable quantum computation and long-range entanglement. We argue that one-dimensional electron channels formed in the silicon quantum well of a Si/SiGe heterostructure exhibit strong Coulomb interactions and realize strongly interacting Luttinger liquid physics. At low electron densities, the system enters a Wigner regime characterized by dominant 4kF correlations; increasing the electron density leads to a crossover from the Wigner regime to a Friedel regime with dominant 2kF correlations. We…
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