In-Substrate Imaging of Diamond hBN FET Current via Widefield Quantum Diamond Microscopy

Anuj Bathla, Subrat Kumar Pradhan, Ajit Kumar Dash, Prabhat Anand, M. Girish Chandra, Kenji Watanabe, Takashi Taniguchi, Akshay Singh, Veeresh Deshpande, Kasturi Saha

arXivarxiv/2601.15355Jan 21, 2026cond-mat.mes-hallscore 0

We demonstrate widefield magnetic imaging of current flow in hydrogen terminated diamond field effect transistors (FETs) through in-substrate nitrogen vacancy (NV) centers. Hydrogen termination of the diamond surface induces a two dimensional hole gas (2DHG), while an ensemble of near surface NV centers located $ \sim 1~μm$ below the surface enables noninvasive magnetic imaging of current flow with micrometer scale spatial resolution. The FETs were electrically characterized over a range of drain source biases $V_{ds}= 0$ to $-15V$ and gate voltages,$V_{gs}= +3$ to $-9V$ followed by in situ…

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