Near-single-domain superconducting aluminum films on GaAs(111)A with exceptional crystalline quality for scalable quantum circuits

Hsien-Wen Wan, Yi-Ting Cheng, Chao-Kai Cheng, Jui-Min Chia, Chien-Ting Wu, Sheng-Shiuan Yeh, Chia-Hung Hsu, Jueinai Kwo, Minghwei Hong

arXivarxiv/2602.17249Feb 19, 2026quant-phscore 0

We have reproducibly grown near-single-domain superconducting aluminum (Al) films on GaAs(111)A wafers using molecular beam epitaxy. Synchrotron X-ray diffraction revealed twin-domain ratios of 0.00005 and 0.0003 for 19.4-nm- and 9.6-nm-thick films, respectively-the lowest reported for Al on any substrate and long considered unattainable for practical device platforms. Azimuthal scans across off-normal Al{$11\bar{1}$} reflections exhibit narrow full width at half maximum (FWHM) values down to $0.55^\circ$, unmatched by epi-Al grown by any other method. Normal scans showed a well-defined…

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