First-principles predictions of band alignment in strained Si/Si1-xGex and Ge/Si1-xGex heterostructures

Nathaniel M. Vegh, Pericles Philippopoulos, Raphaël J. Prentki, Wanting Zhang, Yu Zhu, Félix Beaudoin, Hong Guo

arXivarxiv/2603.13219Mar 13, 2026cond-mat.mes-hallscore 0

Accurate band offsets are essential for predictive continuum modeling of nanostructures such as quantum wells and quantum dots formed in strained Si/Si1-xGex and Ge/Si1-xGex heterostructures. Experimental offset data for these systems remain sparse away from endpoint compositions, making composition-dependent design difficult. We use atomistic first-principles density functional theory to compute valence- and conduction-band offsets across the full range 0 <= x <= 1. Random alloying is treated with special quasirandom structures, interface lineup terms are extracted from macroscopically…

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