SiGe/Si(111)/SiGe heterostructure for Si spin qubits with electrons confined in L valley of conduction band
In Si(111) crystals, a strong biaxial tensile strain applied within the (111) plane is considered to shift the lowest energy point of the conduction band from the $Δ$ valley to the L valley. Electrons confined in this L valley experience a splitting of their quadruply degenerate energy levels into an undegenerate single-level ground state (L1) and a triply degenerate excited state (L3). The energy of the single-level ground state is sufficiently low relative to the energies of the L3 valley and the $Δ$ valley, making it optimal as a two-level system for a qubit. Using deformation potential…
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