Strain-induced modification of spin-optical dynamics in silicon vacancy centers for integrated quantum technologies

Maximilian Hollendonner, Fedor Dzmitryevich Hrunski, Daniel Scheller, Kim Ullerich, Shravan Kumar Parthasarathy, Wolfgang Knolle, Maximilian Schober, Mirjam Neubauer, Durga Bhaktavatsala Rao Dasari, Michel Bockstedte, Roland Nagy

arXivarxiv/2604.16194Apr 17, 2026quant-phscore 0

Silicon vacancy (VSi) centers in 4H silicon carbide have emerged as a highly promising platform for semiconductor-based quantum technologies, combining excellent spin and optical properties with an industrial-grade, CMOS-compatible material. As these defects are increasingly integrated into practical quantum devices, they inevitably encounter lattice strain. However, while the impact of strain is well documented for other solid-state defects like NV centers in diamond, its specific influence on key VSi spin dynamics such as initialization fidelity and state lifetimes remain largely…

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