Direct On-Wafer Measurements of Noise Parameters in C- and X-bands at $T=4$ K
This paper describes the setup and the results of the direct on-wafer measurements of a FET noise parameters obtained with a source-pull method at temperatures down to T=4K and in the 5-12 GHz frequency range. The setup consists of a cryostat with wafer probes, two reflectometers, a programmable impedance generator, wideband isolators and bias tees and low noise preamplifier, all cooled to cryogenic temperatures, allowing to perform a full vector error-corrected wafer-level measurements of the discrete transistors and amplifier dies. The setup and its calibration procedure are designed in a…
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