Strain-free, symmetrical, InGaAs quantum dots as single photon emitters in the telecomC-band
Non-classical photon sources made of semiconductor quantum dots (QDs) emitting in the telecommunication C-band are crucial components for low-loss, long-distance photonic quantum communication networks. Here we designed and fabricated strain--free In$_{0.7}$Ga$_{0.3}$As/In$_{0.7}$Al$_{0.3}$As QDs grown on GaAs(111)A substrates working as single-photon emitters in the 1550 nm window. The QDs were grown via local droplet etching method in a molecular beam epitaxy environment, employing a thin In$_{0.7}$Al$_{0.3}$As metamorphic buffer layer with the same lattice constant of the QD material,…
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