Individually tunable Si/SiGe quantum dot operating voltages via gate-biased illumination

Jared Benson, Sanghyeok Park, Owen M. Eskandari, M. A. Wolfe, Brighton X. Coe, J. P. Dodson, S. N. Coppersmith, Mark Friesen, M. A. Eriksson

arXivarxiv/2606.00446May 30, 2026cond-mat.mes-hallscore 0

Semiconductor quantum dot qubits often require very different voltages on each gate to bring them to a correct operating point. Here, we present a method by which one can controllably and repeatably alter the nanoscale trapped charge distribution at an oxide-semiconductor interface. We demonstrate this method on a Si/SiGe quantum dot device, and we find that the operating voltages can be controlled and made much more uniform. The method relies on illumination with near-infrared light in the presence of applied gate voltages, and it enables the tuning of the device operating point on a…

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