Adjoint-Based Bayesian Uncertainty Quantification for PDE-Constrained Inverse Problems with Application to Semiconductor Imaging
We formulate a Bayesian framework for reconstructing doping profiles in pn-junction semiconductor devices from boundary flux measurements. The unknown doping field is modeled as a piecewise-constant function characterized by an unknown interface and two plateau concentrations, leading to a nonlinear ill-posed inverse problem governed by a Poisson-Boltzmann-type equation. To represent this structure while enabling efficient gradient-based inference, we introduce a pushforward prior constructed by mapping a latent Gaussian field with Matérn-type covariance through a sigmoid transformation. The…
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