A Unified Electrostatic-to-Spin Framework for Asymmetric Multi-Gate CMOS Quantum Devices
In advanced complementary metal-oxide-semiconductor (CMOS) quantum chips, compact gate stacks make it difficult to connect lithographic geometry, electrostatic confinement and many-electron spin filling in one transparent model. This connection is central to design-technology co-optimization (DTCO). Here we develop a reduced-order analytical framework for asymmetric multigate silicon quantum-dot devices. Its electrostatic core, the Poisson-kernel coupled-interface Green-function (PK-GF) model, agrees with an independent finite-volume solution at the millivolt scale for the matched…
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