Radio frequency readout and control of Ge/SiGe hole spin qubits with a global accumulation gate

Tien-Ho Chang, Chi-Wei Lee, Jian-Chang Zeng, Chia-Hao Wei, Ching-Shiang Wang, Fu-Yuan Gu, Guan-Yu Yang, Ruei-Syuan Chiang, Ho-Chun Wu, Ming-Hao Lee, Ming-Wen Chu, Guang Li Luo, Ta-Chun Cho, Shawn S. H. Hsu, Tzu-Kan Hsiao

arXivarxiv/2607.06342Jul 7, 2026cond-mat.mes-hallscore 0

Hole spin qubits in undoped Ge/SiGe quantum well structures have advanced rapidly in performance and scalability. However, stringent multi-layer patterning and overlay requirements of conventional overlapping-gate devices create a bottleneck for academic proof-of-concept experiments involving few-qubit devices. Here we present fabrication and measurements of Ge/SiGe spin qubit devices with a global accumulation gate and single-layer depletion fine gates, which substantially reduce fabrication complexity. With careful design of the gate-2DHG capacitance, we demonstrate RF-based single-shot…

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