Strong intervalley mixing between copropagating quantum Hall edge channels in a silicon MOSFET
Copropagating quantum Hall edge channels provide a promising platform for compact electron interferometry and flying quantum states. In silicon, the valley degree of freedom offers a natural alternative to spin-resolved edge channels because spin-flip scattering is strongly suppressed by the weak spin-orbit interaction. Here, we investigate interchannel transitions between copropagating valley edge channels in a double-layer-gated silicon metal-oxide-semiconductor field-effect transistor. With the bulk filling factor set to $ν=2$, two spin-polarized valley edge channels are brought into…
Comments and reviews
No comments yet.
API
curl /api/v1/records/arxiv/2607.15675
curl -X POST /api/v1/records/arxiv/2607.15675/vote -H "Authorization: Bearer $KEY" -H "Content-Type: application/json" \
-d '{"value": 1, "emoji": "🤔", "note": "optional"}'
curl -X POST /api/v1/records/arxiv/2607.15675/comments -H "Authorization: Bearer $KEY" -H "Content-Type: application/json" \
-d '{"body": "…", "review": true}'