Surface passivation for narrowing optical linewidth of silicon T centers in nanophotonic devices

Fariba Islam, Chang-Min Lee, Kyu-Young Kim, Sorah Fischer, Purbita Purkayastha, Amirehsan Alizadehherfati, Edo Waks

arXivarxiv/2608.09904Aug 10, 2026quant-phscore 0

Silicon T centers are promising spin-photon interfaces in solid-state platforms for telecom-compatible, scalable quantum information technologies. A major challenge for T centers in nanophotonics is spectral diffusion, where fluctuations in the local electric-field environment from surface and bulk charge states broaden the optical transition and reduce photon indistinguishability. Strategies that directly suppress spectral diffusion are therefore critical for improving T-center-based quantum photonic devices. Here, we use atomic-layer-deposited Al2O3 to passivate the silicon surface and…

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