Enhancing charge stability of Ge quantum well heterostructures via SiGe layer composition engineering

Ding-Ming Huang, Jun-Hang Liu, Han Gao, Jie-Yin Zhang, Jian-Huan Wang, Fang-Ze Liu, Xin-Yu Zhou, Yi Luo, Bin-Xiao Fu, Xiao-Fei Liu, Ji-Yin Wang, Jian-Jun Zhang, H. Q. Xu

arXivarxiv/2609.11214Sep 10, 2026cond-mat.mes-hallscore 0

Composition modulation is a powerful technique for designing materials with tailored properties, fueling the development of advanced semiconductor devices. In this work, we have implemented this technique into Ge quantum well heterostructures, offering a promising avenue to address the critical challenge of charge stability in spin qubit devices. Harnessing the atomic-scale precision of molecular beam epitaxy, we have engineered the band structure of the SiGe top barrier via graded composition modulation, thereby reducing charge accumulation states at the SiGe-dielectric interface and…

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