Electrostatic Stabilization of Near-Surface Quantum Sensors via Dielectric Interface Engineering

Atharva Paranjape, Kathrin Küster, Olga Shevstova, Lisa Ebo, Toni Hache, Klaus Kern, Rainer Stöhr, Jörg Wrachtrup, Aparajita Singha

arXivarxiv/2609.20137Sep 17, 2026quant-phscore 0

Control of charge-state stability in near-surface quantum defects is critical for nanoscale sensing, yet remains particularly challenging under ultra-high vacuum (UHV), where surface-induced band bending destabilizes the metrologically relevant charge-state. Here, we present a robust and reproducible approach for stabilizing shallowly implanted (< 10 nm deep) nitrogen-vacancy (NV) centers in near-UHV conditions (P = $3 \times 10^{-9}$ mbar) based on dielectric interface engineering. Through measurements on individually addressable NV centers, we demonstrate that a TiO2 coating on the diamond…

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