Efficient creation of shallow NV$^-$ ensembles by high-angle ion implantation
Negatively charged nitrogen-vacancy (NV$^-$) centers located a few nanometers below the diamond surface are key quantum defects for nanoscale sensing of external spins. However, the creation of shallow NV$^-$ centers with high yield remains a materials challenge. Here, we demonstrate that high-angle ion implantation enhances the creation efficiency of shallow NV$^-$ centers. By implanting $^{15}$N ions at angles exceeding 60$^\circ$, we achieve high NV$^-$ yields approaching 10% with effective NV$^-$ depths below 10 nm. These yields are significantly higher than those typically reported for…
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