Disentangling Measurement Protocol from Material Physics in Isotypic and Anisotypic SiC/Si Heterojunctions: A Metrology-Driven Study for Betavoltaic Energy Conversion
We compare isotypic (n-SiC/n-Si) and anisotypic (n-SiC/p-Si) heterojunctions using Kelvin probe force microscopy, scanning tunnelling spectroscopy, precision electrical measurements with a Keithley 2450 SourceMeter, and a 0.1 farad supercapacitor charge-storage test. Two-wire probing shows an enhanced low-bias current in the isotypic structures; four-wire Kelvin sensing removes the voltage-drop contribution of external leads and contacts and collapses this current to a much lower bulk and interface limited level. The high density of interface states detected by KPFM and STS, up to five times…
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