A Si-on-SiC Platform for Interfacing with Vanadium Dopants in the Telecom O-Band

Timothy Draher, Nolan Bitner, Vasileios Niaouris, Claire E. McDermott, David Czaplewski, Supratik Guha, David D. Awschalom, F. Joseph Heremans, Alan M. Dibos

arXivarxiv/2609.35702Sep 28, 2026cond-mat.mtrl-sciscore 0

Vanadium color centers in silicon carbide (SiC) offer telecom O-band emission, sub-microsecond optical lifetimes, and second-scale spin relaxation times, rendering them promising candidates for quantum network nodes. However, efficient photon extraction from the high-refractive-index SiC host remains challenging. Here, we introduce a silicon-on-SiC heterogeneous photonic platform in which silicon nanocavities evanescently couple to shallow vanadium dopants in commercial 4H-SiC, enabling efficient zero-phonon line (ZPL) collection under resonant excitation. In as-grown ensembles, we observe…

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