Gate-defined quantum dot and charge noise analysis in a Forksheet transistor

Dominic Leclerc, Claude Rohrbacher, Alexis Morel, Joffrey Rivard, Romain Ritzenthaler, Christian Lupien, Hans Mertens, Naoto Horiguchi, Eva Dupont-Ferrier

arXivarxiv/2610.24136Oct 16, 2026cond-mat.mes-hallscore 0

We report the cryogenic characterization of a 14-nm nMOS Forksheet transistor down to 10 mK. We demonstrate that the device retains transistor operation with improved characteristics at cryogenic temperatures, while also forming a gate-defined quantum dot that can be tuned to the single-electron regime. In the quantum-dot regime, we perform low-frequency charge-noise measurements across different charge occupations and observe an average charge-noise amplitude of $\langle S_0\rangle = 10\;μ\mathrm{eV}/\sqrt{\mathrm{Hz}}$ at 1 Hz, with a minimum measured value of…

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