Sidewall Metrology Protocol for Superconducting Qubit Devices
Sidewall morphology is a potentially important factor influencing superconducting qubit performance, yet its quantitative characterization remains challenging due to the absence of standardized measurement protocols. In this work, we develop a scanning probe microscopy-based measurement framework for the quantitative characterization of superconducting qubit sidewalls. The framework introduces a refined root mean square lateral sidewall roughness descriptor and a new curvature-equivalent radius for quantifying vertical sidewall morphology. The descriptors and measurement procedures are…
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